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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD239/A/B/C DESCRIPTION With TO-220C package Complement to type BD240/A/B/C APPLICATIONS For medium power linear and switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Ta=25ae ) SYMBOL PARAMETER CONDITIONS BD239 BD239A BD239B VCBO HAN INC Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector-base voltage GE S BD239C BD239 BD239A BD239B BD239C Open emitter EMIC OND TOR UC VALUE 55 70 90 115 45 60 UNIT V VCEO Open base 80 100 Open collector 5 2 4 0.6 TC=25ae 30 150 -65~150 ae ae V VEBO IC ICM IB PC Tj Tstg V A A A W Collector power dissipation Junction temperature Storage temperature Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD239/A/B/C CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER BD239 BD239A VCEO(SUS) Collector-emitter sustaining voltage BD239B BD239C VCEsat VBE Collector-emitter saturation voltage Base-emitter on voltage BD239/A ICEO Collector cut-off current IC=1 A;IB=0.2 A IC=1A ; VCE=4V VCE=30V; IB=0 0.3 VCE=60V; IB=0 VCE=45V; VBE=0 VCE=60V; VBE=0 VCE=80V; VBE=0 VCE=100V; VBE=0 VEB=5V; IC=0 IC=0.2A ; VCE=4V IC=1A ; VCE=4V 40 15 1 mA mA IC=30mA; IB=0 80 100 0.7 1.3 V V CONDITIONS MIN 45 60 V TYP. MAX UNIT SYMBOL ICES BD239B/C BD239 BD239A Collector cut-off current HAN INC BD239B SEM GE OND IC TOR UC 0.2 mA BD239C IEBO hFE-1 hFE-2 Emitter cut-off current DC current gain DC current gain 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BD239/A/B/C SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.10 mm) 3 |
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